Zinc Oxide particles were synthesized by Chemical Precipitation Method. The average particle size of ZnO is found to
be 19 nm. Thick films of ZnO were prepared by screen printing technique and Al2O3 -surface activated ZnO films were prepared
by dipping method. The variation of electrical conductivity of pure and surface activated films was studied with temperature. The
results of electrical measurement at the room temperature show that, pure ZnO and surface activated thick films are
semiconducting in nature. The decrease in conductivity of surface activated thick films may be due to presence of potential
barrier at the intergrain boundaries of ZnO-Al2O3 and hence the grain boundary region becomes more resistive.
