• Wide Bandgap Power (WBG) Semiconductor Power
Devices and Modules Market size was valued at US$ 2.73 billion in 2024 and is projected to reach US$ 8.47 billion by 2032, at a CAGR of 17.4% during the forecast period 2025-2032
Report Studies
• The global Wide Bandgap Power (WBG) Semiconductor Power Devices and Modules Market size was valued at US$ 2.73 billion in 2024 and is projected to reach US$ 8.47 billion by 2032, at a CAGR of 17.4% during the forecast period 2025-2032.
• WBG semiconductors, primarily silicon carbide (SiC) and gallium nitride (GaN) based devices, offer superior performance compared to traditional silicon counterparts due to their higher breakdown voltage, thermal conductivity, and switching efficiency. These power electronics components include discrete devices like MOSFETs and diodes as well as integrated power modules, enabling transformative applications across industries.
By Types
• Power SiC Devices and Modules
• Subtypes: SiC MOSFETs, SiC Schottky diodes, Full SiC modules
• Power GaN Devices and Modules
• Subtypes: GaN HEMTs,
Modules
By Application: • Electric Vehicle • Photovoltaic and Energy Storage Systems • Electric Vehicle Charging Infrastructure • PFC Power Supply • Motor Drive • UPS • Others
By Material:
Silicon Carbide (SiC)
Gallium Nitride (GaN)
Diamond-based Semiconductors
Below 600V
600-1200V
Above 1200V
Key Players :
• Wolfspeed (Cree) (U.S.)
• Infineon Technologies (Germany)
• ROHM Semiconductor (Japan)
• STMicroelectronics (Switzerland)
• ON Semiconductor (U.S.)
• Mitsubishi Electric (Japan)
• Littelfuse (U.S.)
• Microchip Technology (U.S.)
• GeneSiC Semiconductor (U.S.)
• Transphorm (U.S.)
• GaN Systems (Canada)
• Navitas Semiconductor (Ireland)
• Efficient Power Conversion (EPC) (U.S.)
