CAGR Value :
The global APD avalanche photodiode market was valued at USD 138 million in 2025 and is projected to reach USD 179 million by 2032, exhibiting a CAGR of 3.9% during the forecast period.
Report Studies :
APD avalanche photodiodes (APDs) are highly sensitive semiconductor electronic devices that exploit the photoelectric effect to convert light to electricity. APDs can be thought of as photodetectors that provide a built-in first stage of gain through avalanche multiplication. From a functional standpoint, they can be regarded as the semiconductor analog to photomultipliers. By applying a high reverse bias voltage, APDs show an internal current gain effect due to impact ionization. However, some silicon APDs employ alternative doping and beveling techniques compared to traditional APDs that allow greater voltage to be applied before breakdown is reached and hence a greater operating gain. In general, the higher the reverse voltage, the higher the gain.
By Types :
Si APD
InGaAs APD
Others
By Applications :
Industrial
Medical
Mobility
Others
Key Industry Players
• Hamamatsu Photonics K.K.
• First-sensor AG (TE Connectivity)
• Luna Innovations (OSI Optoelectronics)
• KYOTO (Kyosemi Corporation)
• Excelitas Technologies Corp.
• OSI Optoelectronics
• Edmund Optics
• GCS
• Accelink Technologies Co., Ltd.
• NORINCO GROUP
• Marktech Optoelectronics
• Laser Components GmbH
• Albis Optoelectronics AG