International Research Journal of Engineering and Technology (IRJET)
e-ISSN: 2395-0056
Volume: 11 Issue: 08 | Aug 2024
p-ISSN: 2395-0072
www.irjet.net
SIMULATION STUDY OF DIELECTRIC MODULATED DUAL-MATERIAL TRI GATE JUNCTIONLESS FET BASED BIOSENSOR Ayush Tiwari1, Keshav Lavania2, Jai Kashmira3, Jatin Rana4 1,2,3,4B. Tech, ECE, G.B Pant Institute of Engineering and Technology, Pauri, India
---------------------------------------------------------------------***---------------------------------------------------------------------
Abstract - This manuscript explores the simulation of a tri-
Among the different types of biosensors developed, including optical, electrochemical, nano-mechanical devices, ion-sensitive electrodes, and piezoelectric models, Field Effect Transistor (FET)-based biosensors have gained widespread adoption.
gate Junctionless Accumulation Mode Field-Effect Transistor (JLAM-FET) in Silvaco, conducting an analysis to calculate sensitivity while varying permittivity concerning shifts in parameters such as threshold voltage, charge, doping concentration, and channel length, specifically in the context of biomolecules. Unlike a traditional Metal-OxideSemiconductor Field-Effect Transistor (MOSFET), a junctionless transistor lacks junctions, and its current drive is regulated by doping concentration rather than gate capacitance. Notably, a Junctionless transistor exhibits superior performance compared to a conventional MOSFET, particularly in scenarios with a short channel length. An optimal doping concentration of 1 × 10^18 cm⁻³ and a threshold voltage change of 2000 mV are identified to achieve maximum sensitivity. The alteration in the central potential of the channel emerges as a critical factor in determining both threshold voltage and device sensitivity. The successful simulation of the device captures all variations and outcomes. As we navigate through the intricate landscape of semiconductor physics and biomolecular interactions, the findings not only solidify the JL AM-FET's standing as a forefront technology but also open avenues for tailoring its capabilities to specific biomolecular sensing applications. This holistic approach contributes to the growing body of knowledge in semiconductor device engineering, presenting opportunities for the development of innovative solutions in biosensing technology.
Junctionless field-effect transistors (JLFETs) are emerging as promising devices due to their simpler fabrication process, which omits the need for conventional p-n junctions, enabling further device miniaturization. These transistors offer a high ION/IOFF ratio, minimal thermal budgeting, near-ideal subthreshold swing, and reduced roll-off. However, JLFETs face challenges such as mobility degradation due to heavily doped channels and reduced ON current (ION) caused by high parasitic resistances. To address these issues, Junction Accumulation Mode (JAM) FETs have been introduced. They maintain heavy doping in the source/drain regions while lowering the channel doping, enhancing both ION and the ION/IOFF ratio compared to traditional JLFETs. However, high electric fields at the channel/drain interface during the ON state can lead to hotelectron effects (HCEs) and gate-induced drain leakage (GIDL). Dual-material gate engineering is a proven method to counteract these reliability issues, as well as short- channel effects (SCEs), in various FET architectures. Additionally, the Tri-Gate (TG) architecture has gained attention for its excellent gate control in sub-100 nm regimes, making it highly effective in mitigating SCEs and conducting higher currents than double-gate MOSFETs (DGMOSFETs). The feasibility of fabricating both n-channel and p-channel TG MOSFETs underscores its potential for realworld applications. Tri-Gate devices are known for their high ION/IOFF ratio and power efficiency, making them more power-efficient than other FET types, including planar or FinFETs. Features like reduced surface scattering, improved subthreshold swing (SS), and lower drain-induced barrier lowering (DIBL) make TG-JLFETs particularly suitable for both analog and digital applications. The TG-JLFET architecture's enhanced gate-channel electrostatics offer immunity to SCEs, pushing the boundaries of device scaling. With increasing demand for high packing density, managing short-channel effects and parasitic capacitances, such as those addressed by Silicon-on-Insulator (SOI) technology, becomes crucial.
Key Words: Short channel effects, Central potential alteration, Current drive, Central potential alteration, Channel length, Permittivity variation, Sensitivity analysis.
1.INTRODUCTION Biosensors are crucial tools for the rapid detection of biomolecules, with a particular promise in label-free detection of both neutral (biotin–streptavidin) and charged biomolecules (DNA). The advancement in fabrication technologies has facilitated the cost-effective large-scale production of nanoscale biosensors, which are compatible with CMOS (Complementary Metal Oxide Semiconductor) technology. This integration streamlines the detection systems, eliminating the need for complex transducers and paving the way for system-on-chip (SoC) applications.
© 2024, IRJET
|
Impact Factor value: 8.226
|
ISO 9001:2008 Certified Journal
|
Page 35