International Research Journal of Engineering and Technology (IRJET)
e-ISSN: 2395-0056
Volume: 10 Issue: 08 | Aug 2023
p-ISSN: 2395-0072
www.irjet.net
Modeling and Simulation Graphene based Nano FET : A Review 1Neha, 2Manoj Kumar 1Research Scholar, ECE Department, Om Sterling Global University, Hisar, Haryana (India) 2Associate professor, ECE Department, Om Sterling Global University, Hisar, Haryana (India)
---------------------------------------------------------------------------***--------------------------------------------------------------------------structure known as graphene. In-depth analyses of each Abstract: Graphene-based Field Effect Transistor modelling is described in this article. Utilizing SILVACO TCAD tools, modelling is completed. The structure is built using the virtual ATLAS framework, and the model is used to assess the efficacy of graphene-based FETs. To create the device structure, we first deposit a 5nm thick polysilicon layer rather than a graphene sheet. As the channel material, graphene is used, and it is modelled as a semiconductor with a 10,000 cm 2 /V-s carrier mobility. The output characteristic and transfer curve are plotted as characteristic curves with TONYPLOT. There is no band gap in pure graphene. As a result, it is regarded as a zero bandgap or semi-metal semiconductor. Because GFETs lack a bandgap and have a lower I ON/I OFF ratio than silicon-based transistors, they are still less efficient for use in digital logic circuits than Si transistors. Due to its extreme mobility, it is better suited for RF applications. Thus, in this article, it is possible to get the maximum cutoff frequency (f T) and the maximum oscillation frequency (f max), which are thought to represent the FOMs of RF transistors. Keywords: Modelling
Graphene,
grapheme
based
FET,
GFET,
1. INTRODUCTION Planar, two-dimensional, and just one layer thick, graphene is a crystallized form of carbon. It is a key component of fullerenes, carbon nanotubes, charcoal, and one of carbon-graphite's most significant allotropes. In order to generate extended benzene ring configurations, graphene is made up of sp2 hybridized carbon atoms. With a measured electron mobility of up to 250,000 cm2 V 1 s 1 (suspended form), graphene is known to possess exceptional electrical characteristics as a result of its structure. Additionally, graphene has been shown to have remarkable mechanical qualities and to have the greatest breaking strengths ever measured (42 N-m-1). Additionally, graphene has great optical qualities, which allow it to be used in optical devices like light detectors. [1].
aspect of this unique substance have been sparked by its recent experimental discovery [2].
Figure 1: The Composition of a Graphene Layer Graphene, which has been researched for a very long time and is often referred to as "2D graphite," is used most frequently to illustrate the characteristics of various carbon-based materials. There are many ways in which the fundamental GFET, a three-terminal device, resembles the conventional FET. It consists of a drain, a supply, and a high or back gate. The supply and drain metal electrodes of a GFET are separated from one another by a narrow graphene channel, which is typically tens of microns thick, unlike a silicon-based junction transistor [3].The gate regulates the behaviour of the channel by dictating how electrons react. For the GFET, there are three major gate configurations. As indicated below, typical transistors will either have a high gate, a world back gate, or both.
The structure's single atom of thickness is formed by a honeycomb lattice of carbon atoms, two-dimensional
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