Similar to graphene, zero band gap limits the application of Silicene in nanoelectronics despite of its high carrier
mobility. In this article we calculate the contribution of electron-phonon interaction to thermoelectric effects in silicene. One
considers the case of free standing silicene taking into account interaction with intrinsic acoustic phonons. The temperature
considered here is at room temperature. We noticed that the contribution to thermoelectromotive force due to electron drag by
phonons is determined by the Fermi energy. The explicit temperature dependence of the contribution to thermoelectromotive
force deriving from by phonons is weak in contrast to that due to diffusion, which is directly proportional to temperature. Thus a
theoretical limit has been established for a possible increase of the thermoelectromotive force through electron drag by the
intrinsic phonons of silicene.
