Power Discrete and Modules Market size was valued at US$ 42,730 million in 2024 and is projected to reach US$ 67,840 million by 2032, at a CAGR of 6.8% during the forecast period 2025-2032
Report Studies
• The Global Power Discrete and Modules Market size was valued at US$ 42,730 million in 2024 and is projected to reach US$ 67,840 million by 2032, at a CAGR of 6.8% during the forecast period 2025-2032.
• Power discrete and modules are semiconductor components designed to manage and control electrical power in electronic systems. These devices play a critical role in power conversion, voltage regulation, and energy efficiency across various applications. The product landscape includes MOSFETs, IGBTs, diodes, thyristors, and power modules (both hybrid and intelligent modules). Emerging widebandgap materials like silicon carbide (SiC) and gallium nitride (GaN) are gaining traction due to their superior performance characteristics compared to traditional silicon-based solutions.
By Type:
• The market is segmented based on type into:
• Silicon Carbide (SiC)
• Subtypes: SiC MOSFETs, SiC Schottky diodes, and others
• Gallium Nitride (GaN)
• Subtypes: GaN power devices and GaN RF devices
• Silicon (Si)
• Subtypes: MOSFETs, IGBTs, Rectifiers, Thyristors, and others
• Others
• The market is segmented based on application into:
• Automotive
• Electric vehicles
• Charging infrastructure
• Conventional vehicles
• Industrial
• Motor drives
• Power supplies
• Renewable energy system
• Infineon Technologies AG (Germany)
• ON Semiconductor (U.S.)
• STMicroelectronics (Switzerland)
• ROHM Semiconductor (Japan)
• NXP Semiconductors (Netherlands)
• Texas Instruments (U.S.)
• Mitsubishi Electric Corporation (Japan)
• Renesas Electronics Corporation (Japan)
