Report Overview:
Automotive GaN (Gallium Nitride) Devices represent a transformative class of widebandgap semiconductors specifically engineered for vehicle applications. These highefficiency power components leverage GaN's superior thermal stability and electron mobility to enable smaller, faster, and more energy-efficient solutions compared to traditional silicon-based devices. The technology is becoming increasingly critical for electric vehicle (EV) powertrains, particularly in onboard charging systems, traction inverters, and DC-DC converters where energy density and thermal performance are paramount.
Market Value:
Global Automotive GaN Devices market size was valued at USD 8.8 million in 2024 and is projected to grow from USD 28.6 million in 2025 to USD 5,163 million by 2032, exhibiting a remarkable CAGR of 134.3% during the forecast period. CAGR of 134.3% (2024 – 2032)
By Applications:
Car Charger
Inverter
Motor Drive
Others
By Types:
• Power Device
• Radio-frequency Device
Key players include:
• NXP Semiconductor (Netherlands)
• Infineon Technologies AG (Germany)
• Panasonic Automotive Systems Co., Ltd (Japan)
• Texas Instruments (U.S.)
• Qorvo Inc (U.S.)
• OSRAM Opto Semiconductors GmbH (Germany)
• ROHM Co., Ltd (Japan)
